WebOct 1, 2024 · In this study, indium sulfide (β-In2 S 3) thin films were synthesized on fluorine doped tin oxide (FTO) coated glass substrates by hydrothermal reactions. The hydrothermal reaction time (HRT) was varied from 4 to 16 h and the synthesis temperature was maintained at 160 °C. WebJun 1, 2016 · PDF On Jun 1, 2016, Tulenin S.S. and others published Semiconductor Thin Films of In2S3 for Solar Cells Find, read and cite all the research you need on …
Computational study and characteristics of In2S3 thin
Figure 4a–d represents the field emission scanning electron microscopy (FE-SEM) images of the grown thin films of In2S3 by annealing the indium thin films in sulfur vapor using the CVD method at a fixed pressure (100 Torr) and different annealing temperatures: 500, 550, 600, and 650 °C. The particle size was … See more The XRD diffraction patterns of the grown thin film of In2S3 on the SiO2/Si substrate at constant pressure 100 Torr and different … See more Another possibility to confirm the structure of the studied thin films could be achieved with the help of Raman shift obtained with Raman spectroscopy. Figure 8a,b presents the Raman shifts for the grown β-In2S3 … See more Following the FE-SEM analysis, the EDX spectra were studied to confirm the chemical stoichiometry of In2S3 thin films. The representative EDX pattern was recorded from micro … See more In Photoluminescence (PL) process, the studied In2S3 samples absorb the photon of the incident electromagnetic waves and then re-radiate it. This means an excitation for the In2S3 samples, to a higher energy state followed by a … See more WebIn2S3 thin films grown by CBD with a thickness below 170 nm have an amorphous structure however when increasing the thickness the films exhibit two diffraction peaks associated to the (1 0 3) and (1 0 7) planes of the In2S3 tetragonal structure. on the farm david elliott
Optical and Electrical Properties of Ag-Doped In2S3 Thin Films …
WebCrystallinity, optical band gap, resistivity and photoresponse of thermally evaporated In 2 S 3 thin films deposited at a temperature of 350 °C and further annealed in sulfur vapour at different temperature range of 200–300 °C is investigated. It is observed that with an increase of annealing temperature, predominantly β-In 2 S 3 2 S 3 WebJul 30, 2024 · In 2 S 3 thin film exhibited remarkably strong photoluminescence (PL) at room temp. PL efficiency of In 2 S 3 was comparable to that of quantum wells and quantum … WebPVP polymers containing Li+ or Ag+ Ions have been synthesized in good stability and transparency by using the solution casting method. Their structural, optica on the farmer bob dvd