P-type wse2

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August undefined, 2024

WebOct 12, 2016 · N- and p-type carrier injections into WSe2 with van der Waals contacts of two-dimensional materials Yohta Sata1, Rai Moriya1*, Satoru Masubuchi1, Kenji Watanabe2, Takashi Taniguchi2, and Tomoki Machida1,3* 1Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan 2National Institute for Materials Science, … WebDec 16, 2024 · Moreover, complementary inverters composed of patterned p-type WSe2 and n-type MoS2 layered films are demonstrated with an ultra-high gain of 1280 under a driving voltage (VDD ) of 7 V. This...

Tungsten diselenide - Wikipedia

WebNov 9, 2024 · Realizing robust p-type Ohmic contact to a 2D transition metal dichalcogenide semiconductor will enable direct electronic measurements of quantum transport in correlated phases in the valence bands of monolayer semiconductors. KEYWORDS: Ohmic contact contact resistance monolayer WSe 2 Supporting Information WebApr 10, 2024 · Here, we demonstrate a mixed-dimensional WS2/WSe2/p-Si unipolar barrier photodetector, in which 2D WS2 acts as the photon absorber, atomically thin WSe2 as the … handle clutch purse bag

Improvements in 2D p-type WSe2 transistors towards ultimate …

WebNov 23, 2024 · Moreover, complementary inverters composed of patterned p-type WSe 2 and n-type MoS 2 layered films are demonstrated with an ultra-high gain of 1280 under a … WebApr 14, 2024 · The transfer-free WSe2-based photodetectors exhibit prominent photoresponse with a high photoresponsivity of ~1.7 × 104 A W−1 at Vds = 1 V and Vg = … WebIn this work, we report the realization of p-type WSe2(Ta0.01W0.99Se2) by substitutional Ta-doping. We perform various material characterizations with results indicating successful doping of Ta element. The few-layer Ta0.01W0.99Se2FETs show competitive p-type performances including high current on/off ratio up to 106. handlecmd

Benchmarking monolayer MoS2 and WS2 field-effect transistors

Highly (001)-textured p-type WSe2 Thin Films as Efficient …

WebNov 22, 2024 · The WSe 2 film thicknesses are 120 ± 10 nm except of the X-ray amorphous film which had a thickness of about 340 nm. The samples were crystallized at 550 °C at a … WebAbstract Tungsten diselenide (WSe 2) is a particularly interesting 2D material due to its p-type conductivity. Here we report a systematic single-step process to optimize crystal … bus horan bus hop rome

"WebMay 1, 2024 · The p-doped WSe 2 /MoTe 2 heterostructure can perform as a photovoltaic device because a built-in electric field appears at the interface between MoTe 2 and p-doped WSe 2. Here, a 633 nm laser was used for scanning the surface of WSe 2 in order to obtain the p-doped WSe 2 . x-ray photoelectron spectroscopy (XPS) and electrical measurements … " - P-type wse2

P-type wse2

High-performance multilayer WSe2 field-effect transistors with carrier …

WebTwo-dimensional WSe2, a transition metal dichalcogenide (TMD), is a promising intrinsic semiconductor due to its outstanding electrical and mechanical properties, useful for next-generation electronics. However, its pn coupling and logic applications require reliable n- or p-type doping methods. This study i WebOct 1, 2024 · We report on the low-temperature photoconductive properties of few layer p-type tungsten diselenide (WSe 2) field-effect transistors (FETs) synthesized using the …

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WebMar 4, 2024 · Pentacene islands, a p-type organic material, are formed on the multilayer WSe2 to enhance its photoresponsivity under broadband lights. Pentacene islands can prominently absorb ultra-violet to ... WebAbstract Tungsten diselenide (WSe 2) is a particularly interesting 2D material due to its p-type conductivity. Here we report a systematic single-step process to optimize crystal size by variation of multiple growth parameters resulting …

WebOct 18, 2024 · Selective tuning of ambipolar WSe2 monolayer to p‐ and n‐type semiconductors by chemical doping is demonstrated. The chemical doping not only allows to control the main charge carriers, but... WebApr 7, 2024 · Alkaline metal ion batteries are considered to be promising candidates in the energy storage domain, whereas the sluggish adsorption and diffusion ability by large radius of Na + /K + constrain the large-scale application. Herein, we report the strongly coupled WSe 2 with P, N dual-doped carbon nanosheets (WSe 2 /PNCNS) served as an anode …

Web일 실시예에 있어서, 상기 풀업 트랜지스터의 반도체층은, 상기 초경사 스위칭 소자와 상보적으로 동작할 수 있는 p-형 또는 n-형 반도체 재료로 형성되고, 상기 p-형 반도체 재료는 흑린(Black Phosphorus, BP), 이셀레늄화텅스텐(WSe2), 비화 붕소(BAs) 및 텔루륨으로 이루어진 그룹에서 선택된 하나를 ... WebJan 14, 2016 · Dramatically, the Pt contact surpasses the Pd contact and becomes the p-type ohmic or quasi-ohmic contact with inclusion of the SOC. Therefore, p-type ohmic or …

WebNov 29, 2014 · Electrical transport studies further demonstrate the p-type WSe 2 back-gated field-effect transistors exhibit excellent electronic characteristics with hole mobility over …

WebApr 14, 2024 · The transfer-free WSe2-based photodetectors exhibit prominent photoresponse with a high photoresponsivity of ~1.7 × 104 A W−1 at Vds = 1 V and Vg = −60 V and a maximum detectivity value of ~1.2 × 1013 Jones. ... For example, bulk WSe 2 is a p-type semiconductor with an indirect band gap of ~1.2 eV, ... bus hopton on sea to winterton on seaWebOct 12, 2024 · This study demonstrates a low-temperature Ohmic contact to WSe 2 using a van der Waals (vdW) junction between highly p-doped MoS 2 (p + -MoS 2) and WSe 2. p + … bus hopper nycWebApr 11, 2024 · Their Fermi levels (E f) are located near valence band due to the intrinsic p-type property. The higher Fermi level of WSe 2 than that of b-AsP results in the depletion (accumulation) of electrons in WSe 2 (b-AsP) near the junction interface when they are brought into contact. A type-I straddling-gap junction is, therefore, expected under an ... handle clutch purseWebJul 6, 2024 · The carrier type evolves with increasing WSe2 channel thickness, being p-type, ambipolar, and n-type at thicknesses <3, ∼4, and >5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe2 as a function of the thickness and the carrier band offsets relative to the metal contacts. Furthermore, we ... handlecollisionwithpointWebWe report the fabrication of both n-type and p-type WSe 2 field-effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene … bus hop toulouseWebJul 8, 2016 · WSe 2 is the only 2D-chalcogenide for which a stable complementary technology has been demonstrated 13 and is arguably the most promising candidate for the realization of high-performance... handle collision in golden gateWebSep 19, 2024 · As one of the most important TMDs, WSe 2 has great potential for applications in field effect transistor and complementary metal oxide semiconductor technologies for its bipolar dopability. Yet, precise control over the type and density of free carriers remains challenging. bush opponent 1988